BUR52 comset semiconductors 1/4 the BUR52 is a silicon multiepitaxial planar npn transistor in modified jedec to-3 metal case, intented for use in switching and linear applica tions in military and industrial equipment. compliance to rohs. absolute maximum ratings symbol ratings value unit v ceo collector-emitter voltage (i b = 0) 250 v v cbo collector-base voltage (i e = 0) 350 v v ebo emitter-base voltage (i c = 0) 10 v i c 60 i c collector current i cm t p = (10 ms) 80 a linear and switching industrial equipment h h i i g g h h c c u u r r r r e e n n t t n n p p n n s s i i l l i i c c o o n n t t r r a a n n s s i i s s t t o o r r s s
BUR52 comset semiconductors 2/4 symbol ratings value unit i b base current 16 a p t power dissipation @ t c = 25 350 watts t j junction temperature 200 t s storage temperature -55 to +200 c thermal characteristics symbol ratings value unit r thj-c thermal resistance, junction to case 0.5 c/w electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ mx unit i ceo collector cutoff current v ce = 250 v ; (i b = 0) - - 1 ma i ebo emitter cutoff current v be = 7 v ; (i c = 0) - - 0.2 a t case = 25c ; v cb = 350 v ; (i e = 0) - - 0.2 i cbo collector cutoff current t case = 125c ; v c = 350 v ; (i e = 0) - - 2 ma v ceo(sus) collector-emitter sustaining voltage (*) i c = 200 a 250 - - v v ebo emitter-base voltage i c = 10 ma ; (i c = 0) 10 - - v i c = 25 a ; i b = 2 a - - 1 v ce(sat) collector-emitter saturation voltage (*) i c = 40 a ; i b = 4 a - 0.7 1.5 v i c = 25 a ; i b = 2 a - - 1.8 v be(sat) base-emitter saturation voltage (*) i c = 40 a ; i b = 4 a - 1.5 2 v
BUR52 comset semiconductors 3/4 symbol ratings test condition(s) min typ mx unit v ce = 4 v ; i c = 5 a 20 - 100 h fe dc current gain (*) v ce = 4 v ; i c = 40 a 15 - - - i s/b second breakdown collector current v ce = 20 v ; t = 1 s 17.5 - - a f t transition - frequency v ce = 5 v ; i c = 1 a ; f = 1 mhz - 10 16 mhz t on turn-on time v cc = 100 v ; i c = 40 a ; i b1 = 4 a - 0.3 1 s t s storage time - 1.2 2 f f fall time v cc = 100 v ; i c = 40 a i b1 = 4 a ; i b2 = -4 a - 0.2 0.6 s clamped e s/b collector current v clamp = 250 v ; l = 500 h 40 - - a (*) pulse duration = 300 s, duty cycle 1.5 %
BUR52 comset semiconductors 4/4 information furnished is believed to be accurate a nd reliable. however, cs assumes no responsability for the consequences of use of such info rmation nor for errors that could appear. data are subject to change without notice
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